Apparatus for molding a semiconductor wafer and process therefor

ABSTRACT

Mold pieces ( 105  and  110 ) for molding a layer of mold compound on the interconnect side of a bumped semiconductor wafer ( 118 ) include a primary cavity ( 117 ) and secondary cavities ( 120 ) into which excess mold compound from the primary cavity ( 117 ) flows. The secondary cavities ( 120 ) include a plunger ( 130 ) that asserts a predetermined backpressure that is equal to a desired mold compound pressure on the mold compound during molding. As most of the excess mold compound in the primary cavity ( 117 ) is forced to flow into the secondary cavities ( 120 ), this advantageously leaves a relatively thin layer of mold compound on the semiconductor wafer ( 118 ), which can then be removed, for example by grinding, in a relatively short time. Mold piece ( 105 ) further comprises a movable cavity bar ( 115 ) that can be moved away from mold piece ( 105 ) after molding and be cooled to detach the molded substrate that adheres to the cavity bar.

FIELD OF THE INVENTION

The present invention relates to encapsulating a semiconductor wafer,and more particularly to encapsulating a bumped semiconductor wafer inmold compound.

BACKGROUND OF THE INVENTION

As is known, a chip scale package (CSP) is a semiconductor package thathouses a semiconductor die, where the external dimensions of thesemiconductor package approximates the size of the semiconductor die.Some chip scale packages (CSPs) house a bumped semiconductor die, whereinterconnect terminals (interconnects) are formed on pads on the die.The process of forming the interconnects is often referred to asbumping. Typically, at the wafer level, the interconnects are formedfrom solder, such as, eutectic or high lead solder, on the pads of theconstituent dies of the wafer. Alternatively, the interconnects can bemade of metal such as gold, silver, tin and copper. In addition, themetal interconnects may also have a solder cap.

One method of forming CSPs is by molding the interconnect side of abumped semiconductor wafer in mold compound. A bumped semiconductorwafer is placed on a contoured molding surface of a lower mold piece,with the interconnect side of the semiconductor wafer facing upwardsi.e. with the interconnects extending upwardly. A predetermined amountof mold compound is then disposed on the interconnect side of the wafer.The lower mold piece and upper mold piece are then brought together,with the contoured molding surface and a flat molding surface on theupper mold piece forming a cavity with the substrate and thepredetermined amount of mold compound enclosed in the cavity. As thelower mold piece and an upper mold piece are forced together under animposed elevated temperature, the predetermined amount of mold compoundis compressed to produce a predetermined pressure on the mold compoundin the cavity.

The mold compound melts and the molten mold compound under the resultantmold compound pressure, flows across the interconnect side of thesemiconductor wafer, and between the interconnects, to form a layer ofmold compound on the interconnect side of the semiconductor wafer. Afterthe mold compound has set, the upper and lower mold pieces areseparated. Typically, the molded interconnect side of the semiconductorwafer adheres to the upper mold piece due to the binding force betweenthe solidified mold compound and the flat molding surface of the uppermold piece.

Ideally, the predetermined amount of mold compound is selected such thatthere is a sufficient amount of mold compound to form a layer having athickness that leaves the free ends of the interconnects exposed.However, when the predetermined amount of mold compound is used, apredetermined mold compound pressure may not be attained duringcompression between the mold pieces. Hence, this approach risks theformation of voids in the layer of molded compound on the semiconductorwafer.

Typically, to avoid the formation of voids, an excess amount of moldcompound is employed to ensure the predetermined mold compound pressureis attained in the cavity during compression between the mold pieces.Consequently, the free ends of the interconnects are covered by theexcess portion of the layer of mold compound that is formed. The excessportion is then removed by grinding it away to expose the free ends ofthe interconnects. However, due to the relatively large amount of moldcompound that has to be removed, the grinding process is slow, adverselyaffecting throughput of CSP production. For example, the excess portioncan be 20 microns (10⁻⁶ meters) thick, and the use of grinding, lapping,laser and/or plasma etching, or a combination of these, can take up to30 minutes to remove the excess portion of mold compound.

Another disadvantage of this process, prior to grinding, is thedifficulty in removing the molded semiconductor wafer from the uppermold piece without damaging and/or adversely affecting the constituentdies of the semiconductor wafer.

European patent application no. EP1035572 by Towa Corporation of Japanteaches a method of encapsulating a semiconductor wafer with moldcompound that employs film disposed across the flat molding surface ofthe upper mold piece, prior to molding. Here, a semiconductor waferhaving interconnects extending from the pads thereon, is placed in acavity of a lower mold piece, with the interconnects extending upwardly,as before. A predetermined amount of mold compound is then disposed onthe extending interconnects, and the film is disposed across the flatmolding surface of the upper mold piece. The upper and lower mold piecesare then brought together under an imposed elevated temperature,compressing the predetermined amount of mold compound and the substratein the cavity.

The molten mold compound flows across the surface of the interconnectside of the semiconductor wafer and between the interconnects to form alayer of mold compound on the semiconductor die. During compression, thefree ends of the interconnects abut the film on the upper mold piece,where the film is intended to prevent the free ends of the interconnectsfrom being covered with mold compound, thus avoiding the need for asubsequent grinding step. After the mold compound has set, the upper andlower mold pieces are separated and the film and molded semiconductorwafer adheres to the upper mold piece. Here the film allows the moldedsemiconductor wafer to be removed from the upper mold piece by pullingon it. Then, in a subsequent peeling step, the film is removed from themolded semiconductor wafer and discarded.

As mentioned earlier, the film is used to prevent the free ends of theinterconnects from being covered in mold compound to avoid the need forgrinding. In addition the film also allows the molded semiconductorwafer to be removed from the upper mold piece. However, a disadvantageof using film is that the film is discarded after each mold shot. Hence,the cost of using film is relatively high. Another disadvantage of usingfilm is the need for the additional peeling step to remove the film fromthe molded semiconductor wafer. The peeling step has its cost, handlingand throughput concerns. Yet another disadvantage of using film is thatsome of the mold compound can become trapped between the free ends ofthe interconnects and the film. Consequently, the additional step ofremoving the mold compound using the processes, such as grinding andetching, as mentioned earlier, may still need to be performed after thepeeling step. A further disadvantage of using film is that air maybecome trapped between the film and the wafer, and this can lead to theformation of voids in the molded wafer, which can adversely affect thereliability of the constituent packaged semiconductor dies.

An alternative to using film to aid in the removal of the moldedsemiconductor wafer from the upper mold piece is to coat the flatmolding surface of the upper mold piece with non-stick material such asTeflon®. While the layer of non-stick material assist in the removal ofthe molded semiconductor wafer from the upper mold piece, it does notensure that the free ends of the interconnects are not covered by moldcompound nor does the use of non-stick material have any effect on theamount of excess mold compound that has to be removed. Hence, the needfor the subsequent steps of grinding or etching and the like, asdescribed earlier. In addition, the layer of non-stick material has arelatively short useful life, and provisions will need to be made toreplace the layer of non-stick material regularly.

BRIEF SUMMARY OF THE INVENTION

The present invention seeks to provide an apparatus for molding asemiconductor wafer and process therefor which overcomes, or at leastreduces, the abovementioned problems of the prior art.

Accordingly, in one aspect, the present invention provides an apparatusfor molding a layer of mold compound on at least one surface of asubstrate, wherein the at least one surface has interconnects extendingtherefrom, the apparatus comprising:

a plurality of mold pieces having an open position and a moldingposition, where in the molding position

the plurality of mold pieces form a primary cavity for disposing thesubstrate therein, for disposing a predetermined amount of mold compoundon the at least one surface of the substrate and for molding the layerof mold compound on the at least one surface of the substrate, and

the plurality of mold pieces form a secondary cavity coupled to theprimary cavity, the secondary cavity for receiving excess mold compoundfrom the primary cavity, and the secondary cavity having a pressureasserting element for asserting a predetermined pressure on the moldcompound.

In another aspect, the present invention provides a method for molding alayer of mold compound on at least one surface of a substrate, whereinthe at least one surface has interconnects extending therefrom, themethod comprising the steps of:

a) moving a plurality of mold pieces to an open position;

b) disposing the substrate on at least one of the plurality of moldpieces;

c) disposing a predetermined amount of mold compound on the at least onesurface of the substrate;

d) moving the plurality of mold pieces from the open position to amolding position to form a primary cavity, a secondary cavity andchannel therebetween, with the substrate and the predetermined amount ofmold compound in the primary cavity;

e) compressing the predetermined amount of mold compound and thesubstrate in the primary cavity;

f) channeling excess mold compound from the primary cavity to thesecondary cavity via the channel;

g) asserting a predetermined pressure on the excess mold compound in thesecondary cavity;

h) allowing the mold compound to set under the imposed predeterminedpressure;

i) moving the plurality of mold pieces from the molding position to theopen position; and

j) removing the molded substrate from the primary cavity.

In yet another aspect the present invention provides a molding apparatuscomprising:

a plurality of mold pieces for forming a mold cavity, each of theplurality of mold pieces for providing at least part of a moldingsurface of the mold cavity, wherein during molding the plurality of moldpieces come together to form the mold cavity and to form a molded unitin the mold cavity, and wherein after molding at least some of theplurality of mold pieces move apart;

at least one of the plurality of mold pieces having a first positionrelative to the rest of the plurality of mold pieces during molding, andhaving a second position relative to the rest of the plurality of moldpieces after molding, wherein at the second position the molded unitadheres to the at least part of the molding surface of the at least oneof the plurality of mold pieces;

at least one heating system for heating one or more of the plurality ofmold pieces during molding; and

at least one cooling system for cooling the at least one of theplurality of mold pieces after molding.

In still another aspect the present invention provides a method formolding a unit in a cavity formed by a plurality of mold pieces, whereinthe molded unit adheres to one of the plurality of mold pieces aftermolding, the method comprising the steps of:

a) disposing units to be molded between the plurality of mold pieces;

b) assembling the plurality of mold pieces to form the cavity with theunits to be molded located in the cavity;

c) filling the cavity with mold compound while imposing heat on at leastsome of the plurality of mold pieces;

d) separating the plurality of mold pieces with the molded unitsadhering to one of the plurality of mold pieces; and

e) cooling the at least one of the plurality of mold pieces to detachthe molded unit from the one of the plurality of mold pieces.

In yet still another aspect the present invention provides a method forremoving a molded unit that adheres to a molding surface of a mold pieceafter molding, the method comprising the step of cooling the mold piece.

BRIEF DESCRIPTION OF THE DRAWINGS

An embodiment of the present invention will now be fully described, byway of example, with reference to the drawings of which:

FIG. 1 shows a side sectional view of a molding apparatus in accordancewith the present invention;

FIG. 2 shows a top view of a lower piece of the molding apparatus inFIG. 1;

FIG. 3 shows a flowchart of a molding process using the moldingapparatus in FIG. 1;

FIGS. 4A-G shows various positions of the molding apparatus inaccordance with the process in FIG. 3; and

FIG. 5 shows a photograph a portion of a molded semiconductor wafermolded with the process in FIG. 3 as viewed from the molded interconnectside.

DETAIL DESCRIPTION OF THE DRAWINGS

Mold pieces for molding a layer of mold compound on the interconnectside of a bumped semiconductor wafer include a primary cavity, and asecondary cavity, into which excess mold compound from the primarycavity flows via an channel. The secondary cavity includes a plungerthat asserts a predetermined backpressure on the mold compound that isequal to a desired mold compound pressure. In this way, a significantportion of excess mold compound is forced into the secondary cavity, andthe mold compound is under the desired mold compound pressure. Most ofthe excess mold compound in the primary cavity flows into the secondarycavity, advantageously leaving a relatively thin layer of excess moldcompound on the semiconductor wafer. The thin layer of mold compound isthen advantageously removed in a relatively short time, for example bygrinding or etching. By design, when the lower and upper mold pieces areseparated, the molded semiconductor wafer adheres to the upper moldpiece and the solidified mold compound in the secondary cavity adheresthereto. Consequently, the solidified mold compound in the channelfractures and breaks, the separating the two.

The upper mold piece includes a substantially planar and movable cavitybar, and the molded semiconductor wafer adheres to the cavity bar. Afterthe mold pieces are separated, the cavity bar is removed from the uppermold piece and cooled. While cooling down, the molding compound of themolded semiconductor wafer shrinks. The shrinkage of the molded wafer ismuch more than contraction of the cavity bar during cool down, whichreduces the binding between the molded semiconductor wafer and thecavity bar, resulting in the molded semiconductor wafer detaching fromthe cavity bar.

Hence, the molded semiconductor wafer is advantageously removed from theupper mold piece without the use and consequent expense of film, andwithout subjecting the molded semiconductor wafer to the risk of damageby mechanical removal.

FIG. 1 shows a portion of a molding apparatus 100 comprising an uppermold piece 105 and a lower mold piece 110 in a molding position. As isknown by one skilled in the art, the upper mold piece 105 is mounted toan upper portion of a press (not shown), and the lower mold piece 110 ismounted to a lower portion of a press (not shown). In a conventionalmolding press, the upper portion is not movable and the lower portionmoves in a vertical direction between an upper molding position and alower open position. Consequently, the lower mold piece 110 is movedvertically between the lower open position and the raised moldingposition, which is shown.

The upper mold piece 105 includes a movable cavity bar 115 that slideshorizontally when the upper mold piece 105 is spaced apart from thelower mold piece 110 i.e. when the mold pieces 105 and 110 are in theopen position. The upper mold piece 105 is made of steel such as P20, asis known in the art, and the movable cavity bar is made of tooling steelsuch as 440C or ASP23, as is known in the art. The cavity bar 115 isshaped to slide in a correspondingly shaped recess in the upper moldpiece 105. Hence, the cavity bar 115 slides horizontally on the uppermold piece 105.

The lower mold piece 110 has a cavity 117 with a molding surface, andwithin the cavity 117 a semiconductor wafer 118 having interconnects 119is disposed for molding. The lower mold piece 110 includes severalsecondary cavities, although here only one secondary cavity 120 is shownfor illustrative purposes. The secondary cavity 120 is coupled to theprimary cavity 117 via a gate 121, which provides a channel for moltenmold compound to flow from the primary cavity 117 to the secondarycavity 120 during molding. A selected spring 125 acts with apredetermined force on a plunger 130. The plunger 130 provides a movablesurface of the secondary cavity 130 by way of its upper portion 138, andthis movable surface exerts a predetermined pressure, also referred toas backpressure, on the mold compound in the secondary cavity 120, andhence, on the mold compound in the primary cavity 117.

Thus, by employing the spring 125 that exerts a corresponding force whencompressed, a predetermined mold compound pressure can advantageously beimposed and maintained on the mold compound in the primary cavity 117 bythe plunger 130 during molding. The plunger may be 3-5 millimeters (mm)in diameter, and will be described later. There are a number of plungersand associated secondary cavities arranged around the primary cavity117.

The spring 125 provides a relatively cheap and convenient way ofexerting the required force, however it will be appreciated thatpneumatic and hydraulic systems with associated actuators may beemployed in the secondary cavity 120 to exert the required force on theplunger 130.

The lower mold piece 110 includes a bottom mold base 131, an ejectorplate 132, a stopper shaft 133, a lower cavity plate 134, and a lowercavity core 145. The lower cavity core 145 provides a lower moldingsurface on which substrate 118 is disposed, and the lower cavity corerests on a portion of the bottom mold base 131. Guides 135 extendthrough a sleeve 140 in the bottom mold base 131 and the ejector plate132, and into the lower cavity plate 134 where it is anchored. Thefree-end of the guide 135 has a nut secured thereon. The guides 135slide in the sleeve 140 to maintain vertical alignment between the upperand lower mold pieces 105 and 110 when the lower mold piece 110 movesbetween the open position and the molding position.

The bottom mold base 131 supports the stopper shaft 133, and the heightof the stopper shaft 133 determines the thickness of the excess moldcompound on the free ends of the interconnects 119. Stopper shaftshaving a variety of heights are employed to set the desired thicknesswhich will depend on the thickness of the semiconductor wafer 118 andthe height of the interconnects 119, and the selected stopper shafthaving a desired height is inserted in a stopper opening 136 in thestopper plate 132. Typically, with each batch of wafers to be molded, aparticular stopper shaft having a selected height will be employed. Thelower cavity plate 134 receives the end 137 of the guide 135, which maybe spring loaded, with the lower cavity plate being vertically movable.In addition, the lower cavity plate 134 also forms the secondary cavity120 in association with the upper portion 138 of the plunger 130. Anextended portion 152 of the ejector plate 132 forms a base for thespring 125, and when the ejector plate 132 is raised the extendedportion 152 abuts the lower portion 139 of the plunger 130, and raisesthe plunger 130 relative to the lower cavity plate 134.

The lower mold piece 110 further includes an ejector shaft 150, whichextends from the lower surface of the ejector plate 132, through anopening 151 in the bottom mold base plate 131. The ejector shaft 150 canhave a diameter of approximately 10 mm, and is aligned with an actuator160 (shown in FIG. 4F) which is part of an ejector system, as will beknown to one skilled in the art. When the ejector system (not shown) inthe lower portion of the press is activated, the actuator 160 movesupwards abutting the ejector shaft 150, which raises the ejector plate132 against the force of the spring 125 and the weight of the ejectorplate 132. The raised extended portion 152 of the ejector plate 132abuts the lower portion 139 of the plunger 130 and raises the plunger130 relative to the lower cavity plate 134. The upward force on theplunger 130 causes the upper portion 138 of the plunger 130 to ejectmold compound solidified in the secondary cavity 120, as will bedescribed in more detail later.

FIG. 2 shows a top view of the lower mold piece 110 where a number ofthe secondary cavities 120 are located around the primary cavity 117,with each of the secondary cavities 120 coupled to the primary cavity117 by gates 121, as described earlier. Optionally, vacuum openings 205in the primary cavity 117 may be used to hold the semiconductor wafer118 in the primary cavity 117 during molding and subsequently releasedafter molding. In addition, the guides 135 and their respective sleeves140 are shown around the primary cavity 117.

With reference to FIG. 3 and FIGS. 4A-F, the molding process 300 starts305 with moving 310 the upper and lower mold pieces 105 and 110 to theopen position as shown in FIG. 4A. Note that the plunger 130 under theforce of the spring 125 extends upwards to the maximum allowable limitset by the contour of the lower cavity plate 134. Typically, the moldpieces 105 and 110 incorporate heating means, such as electric heatingelements (not shown) that maintain the mold pieces 105 and 110 at apredetermined elevated temperature in preparation for molding. Thebumped semiconductor wafer 118 is then disposed 315 on the lower moldpiece 110 that forms the base of the primary cavity 117, on which thewafer 118 may be optionally secured with a vacuum applied to thesemiconductor wafer 118 via openings 205.

Next, a pellet 405 of mold compound is disposed 320 on the semiconductorwafer 118, as also shown in FIG. 4A. Although, a pellet is shown here,it will be appreciated by one skilled in the art that mold compound inliquid or powder form may also be used and an appropriate dispensemechanism employed. The amount of mold compound is selected to result ina volume of mold compound which: fills the primary cavity 117; all thesecondary cavities 120; and include sufficient additional volume toforce the plunger 130 against the action of the spring 125. This ensuresthat the predetermined mold compound pressure i.e. the pressure on themold compound, as a result of the spring 125 acting on the plunger 130,is asserted on the mold compound in the primary cavity 117.

As is known, the upper and lower mold pieces 105 and 110 are heated to apredetermined temperature, typically 160-175 degrees Celsius (° C.), andthe mold pieces 105 and 110 are then moved 325 to the molding position.During this movement, the heat from the heated mold pieces 105 and 110and the compressive forces between the mold pieces 105 and 110 on thepellet 405, causes the pellet 405 to change to a more liquid state. Inthis state, the mold compound flows across the interconnect surface ofthe semiconductor wafer 118 as shown in FIG. 4B, between theinterconnects 119. Note here that the upper portion 138 of the plunger130 now abuts the cavity bar 115 and the plunger 130 is pushed downwardsagainst the force of the spring 125. As the two mold pieces 105 and 110continue moving towards each other, the molten mold compound is forcedout from the primary cavity 117 and channeled 327 through the gate 121into the secondary cavities 120, as shown in FIG. 4C.

When the upper and lower mold pieces 105 and 110 abut, the pressure onthe compressed mold compound in the primary cavity 117 and the secondarycavities 120 act against the upper portion 138 of the plunger 130. Whenthe pressure on the plunger 130 is greater than the force of the spring125, the plunger 130 is displaced downwards against the force of thespring 125. As the force of the spring 125 is preset to impose apredetermined pressure on the mold compound, the mold compound in thesecondary cavities 120 and the primary cavity 117 has the predeterminedpressure applied 329, as shown in FIG. 4D.

The mold compound is then allowed to set 330 for a period of time, afterwhich the mold pieces 105 and 110 are moved 335 to the open position.With reference to FIG. 4E, as the mold pieces 105 and 110 move apart tothe open position, the binding force between the mold compound portionof the molded semiconductor wafer 412 and the cavity bar 115, is asgreat as the binding force between the portion of mold compound that issolidified 419 in the secondary cavities 120 and the surface of thesecondary cavities 120, and the surface of the upper portion 138 of theplunger 130. This is ensured by the shape of the upper portion 138 ofthe plunger 130, and by ensuring that the upper portion 138 of theplunger 130 is displaced downwards below the surface of the gate 121, asshown in FIG. 4D. In particular, the vertical surfaces provided by thesides of the opening in the lower cavity plate 134 in which the plunger130 moves, and the secondary cavities 120 as a whole, contributesubstantially to the binding force with the mold compound.

As a result, the molded semiconductor wafer 412 (as shown in FIG. 4E)adheres to the cavity bar 115, and the portion of solidified moldcompound 419 in the secondary cavities 120 adhere to the surface of thesecondary cavity. By design, the solidified mold compound at the gate121 forms a weak link, consequently this link breaks as the mold pieces105 and 110 move apart to the open position. Portions of the broken linkare identifiable on a side surface 415 of the molded semiconductor wafer412, and on the side surface 417 of the portion of solidified moldcompound 419.

With the mold pieces 105 ad 110 in the open position, the actuator 160in the lower portion of the press, moves upward through the opening 151and abuts the free end of the ejector shaft 150, forcing the ejectorshaft 150 upward. This causes the ejector plate 132 to move upwardagainst its own weight and he force of the spring 125, and the extendedportion 152 of the ejector plate 132 abuts the lower portion 139 of theplunger 130 and lifts the plunger 130 upwards. Consequently, the upperportion 138 of the plunger 130 moves upwards and forces or ejects theportion of solidified mold compound 419 from the secondary cavities 120,as shown in FIG. 4F. The ejector plate 132 then returns to the positionshown in FIG. 4E when the actuator 160 in the lower portion of the pressis deactivated.

With the molded semiconductor wafer 412 adhering to the cavity bar 115,the cavity bar is removed 340 from the upper mold piece 105, and thetemperature of the cavity bar 115 is reduced 345 relative to thetemperature of the molded semiconductor wafer 412. This can beaccomplished in a number of ways. For example, the cavity bar 115 can beplaced in contact with a cooler metal piece 414, as shown in FIG. 4F.The metal bar 414 then acts as a heat sink, thus cooling the cavity bar115. Alternatively, coolant in the form of air jets may be directed atthe cavity bar (not shown). It will be appreciated that in order tofacilitate cooling of the cavity bar 115, the cavity bar 115 can be madewith a relatively small volume of metal, thus reducing the residual heatin the cavity bar 115, that is to be taken away. While cooling down, themolding compound of the molded semiconductor wafer 412 shrinks. Theshrinkage of the molded wafer 412 is much more than contraction of thecavity bar 115 during cool down, which reduces the binding between themolded semiconductor wafer 412 and the cavity bar 115, resulting in themolded semiconductor wafer 412 detaching from the cavity bar.

Of course, a vacuum mechanism may be employed to hold the moldedsemiconductor wafer 412. The molded semiconductor wafer 412 is received350 as it comes off the cavity bar 115, and the relatively thin layer ofexcess mold compound on the molded semiconductor wafer 412 is thenremoved 355, as is known to one skilled in the art, until the free endsof the interconnects 119 are exposed. A variety of processes may beemployed in addition to or instead of a grinding process. These includelaser etching and lapping. The molding process 300 then ends 360.

FIG. 5 shows a portion of a molded semiconductor wafer 505 as viewedfrom the interconnect side of the semiconductor wafer after molding, butbefore removing the thin layer of excess mold compound. Note that theinterconnects 510 are visible through the layer of excess mold compoundwhich is approximately 20-30 microns (10⁻⁶ meters) thick, as measuredfrom the free ends of the interconnects and the surface of the moldedcompound.

The present invention, as described, provides a method for molding alayer of mold compound on the interconnect side of a bumpedsemiconductor wafer, where the layer of mold compound is relatively thinand more efficiently removed than the layer of mold compound formedusing the prior art processes. In addition, the molding does not requirethe use of film.

This is accomplished using mold pieces that have secondary or overflowchambers into which most of the excess mold compound flows from a moldcavity. A predetermined back pressure in the overflow chambers ensuresthat the pressure in the mold cavity is a desired mold compoundpressure. In this way, the formation of voids in the mold compound inthe mold cavity is substantially reduced, and a relatively thin layer ofmold compound is formed over the free ends of the interconnects,advantageously allowing the layer of mold compound to be efficientlyremoved.

In addition, one of the mold pieces includes a cavity bar to which themolded semiconductor wafer adheres after molding. The cavity bar is thenremoved from the mold piece and cooled. While cooling down, the moldingcompound of the molded semiconductor wafer shrinks. The shrinkage of themolded wafer is much more than contraction of the cavity bar during cooldown, which reduces the binding between the molded semiconductor waferand the cavity bar, resulting in the molded semiconductor waferdetaching from the cavity bar. Hence, the molded semiconductor wafer isadvantageously removed from the mold piece without the expense of film,and without subjecting the molded semiconductor wafer to the risk ofdamage by mechanical removal.

The present invention therefore provides an apparatus for wafer moldingand process therefor which overcomes, or at least reduces, theabovementioned problems of the prior art.

It will be appreciated that although only one particular embodiment ofthe invention has been described in detail, various Modifications andimprovements can be made by a person skilled in the art withoutdeparting from the scope of the present invention.

The invention claimed is:
 1. An apparatus comprising: a press; a first mold piece coupled to the press, the first mold piece having a primary cavity for holding a substrate and a predetermined amount of mold compound on at least one surface of the substrate, the primary cavity configured for heating to melt the mold compound and form a layer of mold compound on the at least one surface of the substrate; a second mold piece coupled to the press, the second mold piece forming a secondary cavity coupled to the primary cavity, the secondary cavity configured to receiving excess mold compound from the primary cavity, and the secondary cavity having a third mold piece forming a movable portion for asserting a predetermined pressure on the mold compound while moving to receive the excess mold compound; and a fourth mold piece for separating a molded substrate from at least one of the mold pieces by removing the fourth mold piece with the molded substrate adhering thereto, and reducing a temperature of the fourth mold piece including abutting the fourth mold piece with a heat sink.
 2. The apparatus of claim 1 comprising means for compressing the predetermined amount of mold compound and the substrate in the primary cavity.
 3. The apparatus of claim 1 comprising means for channeling excess mold compound from the primary cavity to the secondary cavity via a channel.
 4. The apparatus of claim 1 comprising means for asserting the predetermined pressure on the excess mold compound in the secondary cavity.
 5. The apparatus of claim 1 comprising means for allowing the mold compound to set under the imposed predetermined pressure.
 6. The apparatus of claim 1 comprising means for moving the first and second mold pieces from a molding position to an open position.
 7. The apparatus of claim 1 comprising means for removing the molded substrate from the primary cavity.
 8. The apparatus of claim 1 comprising means for removing the layer of mold compound on the substrate such that free ends of the interconnects are exposed.
 9. The apparatus of claim 1 wherein the predetermined pressure is applied by a plunger and acts against a pressure exerted upon the predetermined amount of mold compound disposed within the primary cavity.
 10. The apparatus of claim 9 further comprising a second movable portion coupled to a biasing element to assert a corresponding force on the second movable portion.
 11. The apparatus of claim 10 wherein the second movable portion comprises a plunger.
 12. The apparatus of claim 1 wherein the predetermined amount of mold compound comprises a pellet of mold compound.
 13. A method for molding a layer of mold compound on at least one surface of a substrate, wherein the at least one surface has interconnects extending therefrom, the method comprising: moving a plurality of mold pieces to an open position; disposing the substrate on at least one of the plurality of mold pieces; disposing a predetermined amount of solid and unmelted mold compound on the at least one surface of the substrate and heating the solid and unmelted mold compound; moving the plurality of mold pieces from the open position to a molding position to form a primary cavity, a secondary cavity and channel therebetween, with the substrate and the predetermined amount of mold compound in the primary cavity; compressing the predetermined amount of mold compound and the substrate in the primary cavity; channeling excess mold compound from the primary cavity to the secondary cavity via the channel; asserting a predetermined pressure on the excess mold compound in the secondary cavity; allowing the mold compound to set under the imposed predetermined pressure; moving the plurality of mold pieces from the molding position to the open position; removing the molded substrate from the primary cavity; separating the molded substrate from at least one of the plurality of mold pieces including removing a movable portion of the at least one of the plurality of mold pieces with the molded substrate adhering thereto, and reducing a temperature of the movable portion including abutting the movable portion with a heat sink; and removing the layer of mold compound on the substrate such that free ends of the interconnects are exposed.
 14. The method in accordance with claim 13 wherein removing the molded substrate from the primary cavity comprises asserting a force on the mold compound solidified in the secondary cavities to eject the mold compound solidified therein.
 15. The method in accordance with claim 13 comprising reducing a temperature of the at least one of the plurality of mold pieces.
 16. The method in accordance with claim 15 comprising reducing the temperature of the at least one of the plurality of mold pieces relative to the temperature of the molded substrate. 